| 摘要 |
A method is provided for making a plurality of intrinsic gettering sites in a bonded silicon substrate (21). A first silicon substrate (10) with a first and second surface (12, 13) is provided. The first surface (12) of the first silicon substrate (10) is implanted with a plurality of nucleation ions (14). The first silicon substrate (10) is then heated in such a manner that a plurality of nucleation sites form from the plurality of nucleation ions. A second substrate (20) with a first surface (22) is then bonded to the first surface(12) of the first silicon substrate (10). A predetermined portion (24) of the first silicon substrate (10) is removed from the second surface (13) of the first silicon substrate (10), thereby providing a thin substrate having a plurality of intrinsic gettering sites near its active area, wherein the thin substrate is bonded to a handle semiconductor substrate (21).
|
