| 摘要 |
Disclosed is a semiconductor structure including a first layer, a metal layer, and a second layer. The first layer includes a recessed surface. The metal layer is formed on a part of the recessed surface. The second layer is formed on the metal layer and is trapped by the recessed surface. The second layer includes an uppermost surface, a first transverse surface, and a second transverse surface. An etching ratio of an etchant to the metal layer is greater than an etching ratio of the etchant to the second layer. The thickness of the second layer on a center part of the second layer is smaller than the thickness of the second layer on the first transverse surface or the second transverse surface. Disclosed is a method for forming the semiconductor structure. |
