发明名称 MOS-CONTROLLED THYRISTOR MCT
摘要 In an MOS-controlled thyristor MCT comprising a multiplicity of adjacently disposed individual MCT cells (MC) having a cell width and which are electrically connected in parallel, either the MCT cells (MC) themselves or cell clusters (15) comprising a few closest-packed MCT cells (MC) are mutually separated by nonemitting gaps (2) which do not inject charge carriers into the cathode base layer and which have lateral linear dimensions greater than or at least equal to the cell width of the MCT cells (MC). As a result of this separation, the full performance of the individual MCT cell (MC) is achieved even in large-area components containing many cells.
申请公布号 US5243201(A) 申请公布日期 1993.09.07
申请号 US19920928023 申请日期 1992.08.11
申请人 ASEA BROWN BOVERI LTD. 发明人 BAUER, FRIEDHELM
分类号 H01L21/76;H01L29/08;H01L29/74;H01L29/744;H01L29/745;H01L29/749 主分类号 H01L21/76
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