Sensing circuit for semiconductor memory with limited bitline voltage swing.

摘要

A sensing circuit for dynamic random access memory is disclosed including a pair of bitlines precharged to a first voltage before sensing. A sense amplifier circuit is provided having one node thereof being connected to an external power supply via a switching means including pulsed sense clocks. Control means is provided and is connected to the switching means for controlling the switching means such that the voltage of the power supply is coupled to the node of the sense amplifier for activation for a predetermined period of time, thereby limiting the swing for the high-going bitline to a second voltage lower than said power supply voltage and higher than said first voltage. The reduced bitline swings are achieved by means of the pulsed sense clocks and the pulse widths for sense clocks are determined by means of a reference bitlines connected to the control means. <IMAGE>