Film forming method and apparatus.

摘要

A method and apparatus for radiation of ions from an ion source (40) onto a surface of an objective substrate T and vacuum evaporation of a predetermined material from an evaporation source (50) onto the surface of the substrate, simultaneously while the substrate is continuously moved. The ion radiation from the ion source (40) is applied to a portion of a region reached by the evaporation material from the evaporation source (50), upstream relative to the direction of movement of the substrate from the center of that region (A) and which is lower in evaporation speed than the center of the region, to thereby continuously form a mixture layer of substrate material atoms and evaporation material atoms on the surface of the substrate and then continuously form a vacuum evaporation film with a predetermined thickness on the mixture layer. <IMAGE>