Semiconductor devices with a double layered silicide structure and process of making it.

摘要

A semiconductor device having a double-layered silicide structure and a fabricating method thereof improve stability of titanium silicide at a high temperature by homogeneously maintaining the surface of titanium silicide during subsequent furnace annealing. The double-layered silicide is formed by depositing a metal having a silicide forming temperature at a predetermined first temperature on a polycrystalline silicon layer (9) to form a first metal silicide layer (12), and depositing thereon a metal having a silicide forming temperature at a second temperature which is lower than the first temperature to form a second metal silicide layer (13), so that, since the unstability which occurs at a high temperature during subsequent furnace annealing of a conventional semiconductor device composed of titanium silicide is greatly reduced, grain growth, plastic deformation and agglomeration can be prevented.