BiCMOS semiconductor device for digital logic circuit - has gate between source end drain and emitter above drain with lateral width corresponding to vertical width of base

摘要

The semiconductor device combines th function of a MOSFET, a bipolar transistor and a resistance in the narrowest possible space. The semiconductor substrate has a region of one conductivity with a gate (4) between a strip-shaped source (6) and a drain of opposite conductivity. An emitter (8) within or above the drain, extends through the drain to the first conductivity region. The lateral width of the emitter approximately corresponds to the vertical width of the base. The drain and the emitter are each contacted directly adjacent to the gate. Pref the emitter is formed of polycrystalline silicon, with a high doping concentration region of the first conductivity adjacent to the source which is short-circuited with the source. ADVANTAGE - Rapid switching rate, low power losses and good noise resistance.