| 摘要 |
(a) forming a low concentration n type polycrystalline silicon film and the 2nd insulating film on the first insulating oxide film after forming it on a silicon substrate and annealing the low concentration n type polycrystalline silicon film to recrystallize it; (b) forming an active region by removing the unnecessary part of the low concentration n type polycrystalline silicon film and the 2nd insulating film; (c), forming the low concentration n type polycrystalline silicon film of the active region by the etch-back of it, and a side-wall polycrystalline silicon film, for an emitter and a collector, on the side-wall of the 2nd insulating film; (d) forming a low concentration p type base region by the ion implantation of low concentration p type ions on the low concentration n type polycrystalline silicon film, after defining a base region on the active region; (e) forming a contact hole on the 2nd insulating film of the low concentration p type base region, and implanting high concentration p type ions on the contact region; (f) forming metal electrodes for base, emitter, and collector.
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