| 摘要 |
PURPOSE:To provide the semiconductor device for driving a heating element having low field strength between a source and drain but high breakdown strength. CONSTITUTION:On a part of a substrate 200, an N-buried layer 201 is formed, and at the periphery of it, a P-epitaxial layer 202 is formed. On the top of the N-buried layer 201, an N-epitaxial layer 203 is formed, and at the periphery of it, at the same time at the top of the periphery of the N-buried layer 201, a contact layer 205 contacting with an N-type drain 204 is formed. A P<-> layer 206 is formed at the top of the N-epitaxial layer 203. The P<-> layer 206 includes a P-type gate 207, an N-type source 208 formed on bath sides of the N-type gate 207 and an N-type drain 209. |
