| 发明名称 |
THIN-FILM TRANSISTOR, PREPARATION METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE |
| 摘要 |
The present invention discloses a thin-film transistor, a preparation method thereof, an array substrate comprising the thin-film transistor, and a display device comprising the array substrate, wherein the preparation method of the thin-film transistor comprises: successively depositing an amorphous silicon thin film and a protective layer thin film on a base substrate; annealing the amorphous silicon thin film so as to transform the amorphous silicon thin film into a poly-silicon thin film; and performing a single patterning process on the poly-silicon thin film and the protective layer thin film to pattern the poly-silicon thin film into an active layer and pattern the protective layer thin film into a protective layer. |
| 申请公布号 |
US2016315197(A1) |
申请公布日期 |
2016.10.27 |
| 申请号 |
US201615075439 |
申请日期 |
2016.03.21 |
| 申请人 |
BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
LIU Chienhung;CHAN Yucheng |
| 分类号 |
H01L29/786;H01L27/12;H01L29/66 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A preparation method of a thin-film transistor, comprising steps of:
successively depositing an amorphous silicon thin film and a protective layer thin film on a base substrate; annealing the amorphous silicon thin film so as to transform the amorphous silicon thin film into a poly-silicon thin film; and performing a single patterning process on the poly-silicon thin film and the protective layer thin film to pattern the poly-silicon thin film into an active layer and pattern the protective layer thin film into a protective layer. |
| 地址 |
Beijing CN |
