发明名称 |
Input protection circuit |
摘要 |
A depletion-mode MESFET is connected between an RF input terminal and ground. The gate is connected to a negative reference voltage via a bias resistor and to ground via a capacitor. A detector couples the input terminal to the gate and includes first and second series diodes and a second resistor connected from between the first and second diodes to ground. A coil is connected between the input terminal and an output terminal connected to a GaAs integrated circuit. A Schottky diode limiter is connected to the output terminal for limiting the voltage of both positive and negative polarities that leak to the output terminal from the transistor.
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申请公布号 |
US5301081(A) |
申请公布日期 |
1994.04.05 |
申请号 |
US19920915348 |
申请日期 |
1992.07.16 |
申请人 |
PACIFIC MONOLITHICS |
发明人 |
PODELL, ALLEN F.;STONEHAM, EDWARD B. |
分类号 |
H01Q1/50;(IPC1-7):H02H9/00;H02H3/20;H02H9/04 |
主分类号 |
H01Q1/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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