发明名称 Input protection circuit
摘要 A depletion-mode MESFET is connected between an RF input terminal and ground. The gate is connected to a negative reference voltage via a bias resistor and to ground via a capacitor. A detector couples the input terminal to the gate and includes first and second series diodes and a second resistor connected from between the first and second diodes to ground. A coil is connected between the input terminal and an output terminal connected to a GaAs integrated circuit. A Schottky diode limiter is connected to the output terminal for limiting the voltage of both positive and negative polarities that leak to the output terminal from the transistor.
申请公布号 US5301081(A) 申请公布日期 1994.04.05
申请号 US19920915348 申请日期 1992.07.16
申请人 PACIFIC MONOLITHICS 发明人 PODELL, ALLEN F.;STONEHAM, EDWARD B.
分类号 H01Q1/50;(IPC1-7):H02H9/00;H02H3/20;H02H9/04 主分类号 H01Q1/50
代理机构 代理人
主权项
地址