发明名称 Internal voltage dropping circuit for semiconductor device
摘要 A control circuit for an internal voltage dropping circuit for a semiconductor load circuit includes a first transistor which turns on or off so as to permit or inhibit current from flowing in the internal voltage dropping circuit in accordance with an active/standby switch signal. A pulsating control signal having a specified duty ratio is generated and coupled to the control circuit while a semiconductor device in the load circuit is in a standby mode. The control circuit is intermittently activated at the specified duty ratio when the semiconductor device is on standby so that a current consumption can be reduced in accordance with the duty ratio.
申请公布号 US5300823(A) 申请公布日期 1994.04.05
申请号 US19920912997 申请日期 1992.07.14
申请人 SHARP KABUSHIKI KAISHA 发明人 IHARA, MAKOTO
分类号 G06F1/32;G05F1/46;G11C11/407;G11C11/409;(IPC1-7):G05F3/16 主分类号 G06F1/32
代理机构 代理人
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