发明名称 |
Internal voltage dropping circuit for semiconductor device |
摘要 |
A control circuit for an internal voltage dropping circuit for a semiconductor load circuit includes a first transistor which turns on or off so as to permit or inhibit current from flowing in the internal voltage dropping circuit in accordance with an active/standby switch signal. A pulsating control signal having a specified duty ratio is generated and coupled to the control circuit while a semiconductor device in the load circuit is in a standby mode. The control circuit is intermittently activated at the specified duty ratio when the semiconductor device is on standby so that a current consumption can be reduced in accordance with the duty ratio.
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申请公布号 |
US5300823(A) |
申请公布日期 |
1994.04.05 |
申请号 |
US19920912997 |
申请日期 |
1992.07.14 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
IHARA, MAKOTO |
分类号 |
G06F1/32;G05F1/46;G11C11/407;G11C11/409;(IPC1-7):G05F3/16 |
主分类号 |
G06F1/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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