发明名称 Hetero crystalline structure and semiconductor device using it
摘要 A hetero crystalline structure consisting of semiconductor materials of a zincblende-structure and wurtzite-structure. For example, formed on a semiconductor substrate having a crystal face of (100) of the zincblende structure is a semiconductor material of the wurtzite-structure in its bulk state as a film of the same zincblende-structure as the semiconductor substrate.
申请公布号 US5300793(A) 申请公布日期 1994.04.05
申请号 US19930063054 申请日期 1993.05.19
申请人 HITACHI, LTD. 发明人 KONDOW, MASAHIKO;MINAGAWA, SHIGEKAZU;KAJIMURA, TAKASHI
分类号 H01L29/267;(IPC1-7):H01L29/04 主分类号 H01L29/267
代理机构 代理人
主权项
地址