发明名称 |
Hetero crystalline structure and semiconductor device using it |
摘要 |
A hetero crystalline structure consisting of semiconductor materials of a zincblende-structure and wurtzite-structure. For example, formed on a semiconductor substrate having a crystal face of (100) of the zincblende structure is a semiconductor material of the wurtzite-structure in its bulk state as a film of the same zincblende-structure as the semiconductor substrate.
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申请公布号 |
US5300793(A) |
申请公布日期 |
1994.04.05 |
申请号 |
US19930063054 |
申请日期 |
1993.05.19 |
申请人 |
HITACHI, LTD. |
发明人 |
KONDOW, MASAHIKO;MINAGAWA, SHIGEKAZU;KAJIMURA, TAKASHI |
分类号 |
H01L29/267;(IPC1-7):H01L29/04 |
主分类号 |
H01L29/267 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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