发明名称 |
Method of etching a wafer having high anisotropy with a plasma gas containing halogens and in inert element |
摘要 |
Fine processing is performed by using gas which contains halogen in such a manner that halogen ions contributing to an etching process and ions of a light element, the mass of which is smaller than that of the halogen ion and which does not react with a semiconductor wafer, are present in a plasma generated due to electron cyclotron resonance. Since energy in the plasma is in inverse proportion to the mass, the disorder motion of the halogen ions having large mass can be restrained. Therefore, the halogen ions can be made perpendicularly incident upon the surface of the semiconductor wafer. Consequently, etching process revealing high anisotropy can be performed.
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申请公布号 |
US5304775(A) |
申请公布日期 |
1994.04.19 |
申请号 |
US19910710988 |
申请日期 |
1991.06.06 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
FUJIWARA, NOBUO;NISHIOKA, KYUSAKU;SHIBANO, TERUO |
分类号 |
H01L21/3065;H01L21/311;H01L21/3213;(IPC1-7):B23K9/00 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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