发明名称 |
Chemical vapor deposition of silicon dioxide using hexamethyldisilazane |
摘要 |
A method for depositing silicon dioxide on the surface of a substrate or the like using a nitrogen-containing precursor is disclosed herein. In a preferred implementation the deposition is performed using an atmospheric pressure reactor, into which is directed toward the substrate surface a stream of source gas comprised of ozonated oxygen. A stream of a nitrogen-containing precursor such as, for example, hexamethyldisilazane (HMDS) is also directed into the reactor toward the substrate surface. In addition, a stream of a nitrogen-containing separator gas is directed into the reactor between the streams of precursor and source gases. The inventive deposition method has been shown to result in improved film nucleation on a variety of substrate surfaces.
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申请公布号 |
US5304398(A) |
申请公布日期 |
1994.04.19 |
申请号 |
US19930071516 |
申请日期 |
1993.06.03 |
申请人 |
WATKINS JOHNSON COMPANY |
发明人 |
KRUSELL, WILBUR C.;GARCIA, JAMES P.;DOBKIN, DANIEL M.;WALKER, FREDERICK F.;CASILLAS, JOSE F. |
分类号 |
C23C16/40;C23C16/44;C23C16/455;C23C16/54;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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