MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE HAVING SOI STRUCTURE

摘要

The method is for forming a MOS device on a silicon substrate by using a silicon on insulator (SOI) method so that a parasitic steps of: (A) forming an inpurity layer on a active region of a semiconductor substrate; (B) forming a trench to separate an impurity layer into two parts and forming oxide layer; (C) etching a certain area of an oxide layer to expose a substrate and forming a semiconductor layer on a trench by using a selective epitaxial growing method so that SOI structure is formed; and (D) forming a gate electrode on a SEG layer.