| 摘要 |
The device increases an open ratio with a convertion gate line into a gate electrode, and improves a driving capacity of pixels according to extension of channels. The device is allayed by strip type of a gate address line and matrix shape of a source signal line. A gate address line (4) is sequentially laminated on an insulation layer (5), a semiconductor layer (6) and an omic layer (9). A source electrode is formed in line with a gate address line. A drain electrode is formed by some distance to the source electrode. A sailient part of source eletrode is semi-circular and is directed toward a drain electrode. A drain electrode of transistor drives a pixel electrode.
|
