发明名称 |
Protection apparatus for series pass MOSFETS |
摘要 |
In order to restrict the voltage across the gate oxide of an input pass-through transistor which operates as an input signal source to a MOS inverter, a MOS transistor wired as a MOS diode is connected between the source and gate electrode of the pass-through transistor. The diode connected transistor allows the use of a thin oxide device for the pass-through transistor which enables a high transconductance device to be employed while restricting the voltage across the gate oxide of the pass-through transistor to an acceptable value.
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申请公布号 |
US5333093(A) |
申请公布日期 |
1994.07.26 |
申请号 |
US19910788642 |
申请日期 |
1991.11.06 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
KRAUTSCHNEIDER, WOLFGANG H.;KILLIAN, MIKE A. |
分类号 |
H03K17/082;(IPC1-7):H02H9/00;H03K5/08 |
主分类号 |
H03K17/082 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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