发明名称 Protection apparatus for series pass MOSFETS
摘要 In order to restrict the voltage across the gate oxide of an input pass-through transistor which operates as an input signal source to a MOS inverter, a MOS transistor wired as a MOS diode is connected between the source and gate electrode of the pass-through transistor. The diode connected transistor allows the use of a thin oxide device for the pass-through transistor which enables a high transconductance device to be employed while restricting the voltage across the gate oxide of the pass-through transistor to an acceptable value.
申请公布号 US5333093(A) 申请公布日期 1994.07.26
申请号 US19910788642 申请日期 1991.11.06
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 KRAUTSCHNEIDER, WOLFGANG H.;KILLIAN, MIKE A.
分类号 H03K17/082;(IPC1-7):H02H9/00;H03K5/08 主分类号 H03K17/082
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