| 摘要 |
A lateral transistor includes a semiconductor substrate, a buried layer formed on the semiconductor substrate, an epitaxial layer formed on the buried layer in such a manner that the epitaxial layer is a p-type or n-type (first conductivity-type), a diffusion zone having a second conductivity-type opposite to the first conductivity-type and including an emitter zone and collector zone formed on the epitaxial layer, and a base zone. The base zone includes an epitaxial layer interposed between the emitter zone and the collector zone. The collector zone is formed within a well zone in such a manner that the well zone has the same type conductivity as the collector zone and a lower concentration than the collector zone.
|
