Integrated vacuum microelectronic device and fabrication method thereof

摘要

An integrated vacuum microelectronic device comprises: a highly doped semiconductor substrate, at least one insulating layer) placed above said doped semiconductor substrate, a vacuum aperture formed within said at least one insulating layer and extending to the highly doped semiconductor substrate, a first metal layer acting as a cathode, a second metal layer placed under said highly doped semiconductor substrate and acting as an anode. The first metal layer is placed adjacent to the upper edge of the vacuum aperture and the vacuum aperture has a width dimension such as the first metal layer remains suspended over the vacuum aperture.

主权项

1. An integrated vacuum microelectronic device comprising:
a doped semiconductor substrate, at least one insulating layer placed above said doped semiconductor substrate, a vacuum aperture formed within said at least one insulating layer and extending to the doped semiconductor substrate, a first metal layer placed above said vacuum aperture and configured to act as a cathode, and a second metal layer placed under said doped semiconductor substrate and configured to act as an anode, wherein said first metal layer is placed adjacent to an upper edge of said vacuum aperture, said vacuum aperture having a width dimension such that the first metal layer remains suspended over and seals said vacuum aperture.