Circuit arrangement for modeling transistor layout characteristics

摘要

One or more circuit arrangements and techniques for modeling are provided. In some embodiments, a circuit arrangement includes at least one of a first current source, a second current source, a first diode, a second diode, and a switching component. In some embodiments, the switching component includes a bipolar junction transistor (BJT). In some embodiments, the circuit arrangement is integrated into a metal oxide semiconductor (MOS) device. When the circuit arrangement is integrated into a MOS device, at least one of a substrate current leakage, a junction breakdown, or a diode reverse recovery (DRR) effect is predictable for the MOS device.

主权项

1. A circuit arrangement comprising:
a first current source having a first current input and a first current output; a second current source having a second current input and a second current output; a first diode having a first input node and a first output node; a switching component having a first switching component node, a second switching component node, and a third switching component node; and a second diode having a second input node and a second output node; a first node electrically connected to the first current source, the first diode, and the switching component; a second node directly electrically connected to the first diode, the switching component, and the second diode; and a third node electrically connected to the switching component, the second current source and the second diode.