| 发明名称 |
Semiconductor epitaxial substrate and process for its production. |
| 摘要 |
<p>A semiconductor epitaxial substrate comprises a GaAs single-crystal substrate having thereon an InyGa(1-y)As (0<y</=1) crystal layer as a channel layer. The composition and the thickness of the InyGa(1-y)As layer are chosen to be within the elastic deformation limits of crystals constituting the InyGa(1-y)As layer and in the vicinity of the InyGa(1-y)As layer. The semiconductor epitaxial substrate further comprises a semiconductor layer between the channel layer and an electron donating layer for supplying electrons to the channel layer, the semiconductor layer having a thickness of from 0.5 to 5 nm and a bandgap width of from the bandgap width of GaAs to the bandgap width of the electron donating layer.</p> |
| 申请公布号 |
EP0631298(A2) |
申请公布日期 |
1994.12.28 |
| 申请号 |
EP19940304696 |
申请日期 |
1994.06.28 |
| 申请人 |
SUMITOMO CHEMICAL COMPANY LIMITED |
发明人 |
HATA, MASAHIKO;FUKUHARA, NOBORU;TAKATA, HIROAKI;INUI, KATSUMI |
| 分类号 |
H01L21/203;H01L21/205;(IPC1-7):H01L21/203 |
主分类号 |
H01L21/203 |
| 代理机构 |
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