Method for reducing the effects of semiconductor substrate deformities

摘要

A method is disclosed for reducing the effects of semiconductor deformities. Initially, a semiconductor substrate is provided. The substrate has at least one layer superjacent the substrate and at least one layer subjacent the substrate. Subsequently, the semiconductor structure is examined for warp and bow type deformities. As a result of this examination, the warp and bow measurements of the semiconductor structure are compared with a reference. In the event that the measured warp and bow exceed a predetermined tolerance, either the thickness of the layer superjacent or the thickness of the layer subjacent is reduced. This reducing step can be accomplished by chemical and/or mechanical planarization, dry etching, wet etching or plasma etching.