发明名称 |
RESIST PATTERN FORMING METHOD, RESIST LATENT IMAGE FORMING METHOD, RESIST PATTERN FORMING DEVICE, AND RESIST MATERIAL |
摘要 |
PROBLEM TO BE SOLVED: To provide a resist pattern forming method which can solve a trade-off relationship and improve sensitivity of the resist.SOLUTION: The resist pattern forming method of the present invention comprises: a resist layer forming step S101 of forming a resist layer 12 on a substrate 11; an activation step S103 of activating the resist layer by irradiation of an active energy beam; an attenuation suppressing step S105 of suppressing attenuation of activity of the resist layer; a pattern latent image forming step S107 of forming a pattern latent image on the activated resist layer by irradiation of a latent image forming energy beam; and an image development step S110 of developing the resist layer.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016206680(A) |
申请公布日期 |
2016.12.08 |
申请号 |
JP20160147432 |
申请日期 |
2016.07.27 |
申请人 |
OSAKA UNIV |
发明人 |
TAGAWA SEIICHI;OSHIMA AKIHIRO |
分类号 |
G03F7/38;G03F7/20 |
主分类号 |
G03F7/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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