发明名称 |
Method of manufacturing a semiconductor device comprising an insulated gate field effect device |
摘要 |
A semiconductor body (3) has a first region (4) of one conductivity type adjacent one major surface (5). A first masking layer (6) comprising at least one first mask window (6a) spaced from a second mask window (6b) is defined on the surface (5). Opposite conductivity type impurities are then introduced through the first masking layer (6) and a second masking layer (8) which is selectively removable with respect to the first masking layer (6) is subsequently provided on the first masking layer and patterned to leave a mask area (8a) covering the first mask window (6a). The semiconductor body (3) is then etched through the second mask window (6b) to define a recess (9) extending into the first region (4) while leaving the introduced impurities beneath the masked first mask window (6a) to form a relatively highly doped second region (7). The first and second masking layers (6 and 8) are removed and an insulated gate structure (10) is provided by defining a gate insulating layer (10a) on the recess walls (9a) and providing a gate conductive region (10b) on the insulating layer (10a). A relatively lowly doped third region (11) of the opposite conductivity type is provided to extend between the relatively highly doped second region (7) and the recess (9) to provide a conduction channel area (11a) adjacent the insulated gate structure (10). A fourth region (12) is provided to form a potential barrier (12a) with the relatively lowly doped third region (11) so that the conduction channel area (11a) provides a conductive path between the fourth and first regions (12 and 4).
|
申请公布号 |
US5387528(A) |
申请公布日期 |
1995.02.07 |
申请号 |
US19930095972 |
申请日期 |
1993.07.22 |
申请人 |
U.S. PHILIPS CORPORATION |
发明人 |
HUTCHINGS, KEITH M.;GOODYEAR, ANDREW L.;WARWICK, ANDREW M. |
分类号 |
H01L21/336;H01L29/06;H01L29/10;H01L29/78;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|