发明名称 |
Method of making thin oxide portions particularly in electrically erasable and programmable read-only memory cells |
摘要 |
A method for forming thin oxide portions in electrically erasable and programmable read-only memory cells, including the use of the enhanced oxidation effect and the lateral diffusion of heavy doping, for obtaining a tunnel portion whose dimensions are smaller than the resolution of the photolithographic method used.
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申请公布号 |
US5393684(A) |
申请公布日期 |
1995.02.28 |
申请号 |
US19920988474 |
申请日期 |
1992.12.10 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.R.L. |
发明人 |
GHEZZI, PAOLO;PIO, FEDERICO;RIVA, CARLO |
分类号 |
H01L21/8247;H01L21/28;H01L21/336;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/266 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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