发明名称 METAL WIRING METHOD OF SEMICONDUCTOR DEVICE
摘要 To improve the step coverage during the formation of the metal lines, a method for forming metal lines by electrolyteless guiding solvent is suggested. The process is divided by two step. First, the surface of the substrate is soaked in electrolyteless guiding solvent after contact holes are made, and then is coated with thin metal film to some hundreds angstrom. Second, the metal film remaining around only the contact holes is again soaked in electrolyteless guiding solvent after photoetching, and then the metal line plug with suitable thickness in order to improve the step coverage is formed by self-catalysis.
申请公布号 KR950004839(B1) 申请公布日期 1995.05.13
申请号 KR19920008259 申请日期 1992.05.15
申请人 GOLDSTAR ELECTRON CO., LTD. 发明人 YU, JAE - MIN
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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