发明名称 Non-volatile semiconductor memory having switching devices for segmentation of a memory page and a method thereof
摘要 In order to permit the selection of aspect ratio for a given memory size, a semiconductor array utilizes switches to segment bit line columns, where each segment is associated with a specific set of memory locations and their respective data latches. After all of the data latches are loaded, the switches segment the bit line columns to allow simultaneous programming of those memory locations cells associated with each set of data latches. This sequence is repeated until all desired data storage cells are programmed.
申请公布号 US5424997(A) 申请公布日期 1995.06.13
申请号 US19940213902 申请日期 1994.03.15
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 RAPP, A. KARL
分类号 G11C7/10;(IPC1-7):G11C7/00 主分类号 G11C7/10
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