发明名称 FIELD EMITTER WITH FOCUSING RIDGES
摘要 A gated field-emission structure contains an emitter electrode (46), an overlying electrically insulating layer (48), and one or more electron-emissive elements (52) situated in one or more apertures extending through the insulating layer. A patterned gate electrode (50) through which each electron-emissive element is exposed overlies the insulating layer. Focusing ridges (54) are situated on the insulating layer on opposite sides of the gate electrode. The focusing ridges, which normally extend to a greater height than the gate electrode, cause emitted electrons to converge into a narrow band.
申请公布号 WO9520821(A1) 申请公布日期 1995.08.03
申请号 WO1995US00555 申请日期 1995.01.30
申请人 SILICON VIDEO CORPORATION 发明人 SPINDT, CHRISTOPHER, J.;CORCORAN, PATRICK, A.
分类号 H01J29/04;H01J1/304;H01J3/02;H01J3/18;H01J29/08;H01J29/62;H01J31/12;(IPC1-7):H01J3/02 主分类号 H01J29/04
代理机构 代理人
主权项
地址