| 摘要 |
A gas exhaust system for use in a semiconductor manufacturing process wherein mechanical or chemical processing is applied on silicon wafers or the like arranged in a air-tight process chamber thereof, comprises a vacuum chamber having a gas suction port formed on an upper side thereof and a gas exhaust port formed on a lower side thereof. In the vacuum chamber, the first and second rotors are arranged vertically and supported rotatably at their lower end port ions in a cantilevered condition. The first and second rotors are driven to rotate in the opposite directions to thereby form a certain degree of vacuum condition in the vacuum chamber, whereby the residual gasses in the process chamber are discharged therefrom through the gas exhaust system. Since the the rotors are supported in a cantilevered condition and the bearing mechanisms for the rotors are positioned apart from the suction port of the vacuum chamber, oil supplied to the bearing mechanism does not diffuse or leak into the side of the process chamber.
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