| 摘要 |
The method consists of a step of forming a polysilicon layer between a field oxide layer and an interlevel insulating layer, a step of foming the first contact hole to make metal pattern and filling it with plug material, a step of depositing the first and the second metal thin film sequentially, a step of forming the second contact hole by etching the first metal thin film and the insulating layer sequentially, and a step of depositing Al alloy after removing a photoresist layer and etching the second metal thin film.
|
