发明名称 SEMICONDUCTOR MEMORY AND DRIVING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory which allows data to be quickly read out and written while suppressing power consumption and a driving method thereof.SOLUTION: The semiconductor memory of one embodiment has a variable resistive element whose resistance value varies in response to polarity and volume of an applied voltage as a memory device. It has a standby mode for applying a power supply voltage or a ground potential to both word line and bit line. It has a data writing mode for applying a voltage difference whose value is a first voltage or above between the word line and the bit line. It has a data reading out mode for reading out data written in the memory device by varying the voltage of either the word line or the bit line applied in the standby mode state and applying a voltage difference whose value is smaller than the first voltage between the word line and the bit line.SELECTED DRAWING: Figure 1
申请公布号 JP2016170840(A) 申请公布日期 2016.09.23
申请号 JP20150050034 申请日期 2015.03.12
申请人 TOSHIBA CORP 发明人 MIYAZAKI TAKAYUKI;ICHIHARA REIKA;SUGIMAE KIKUKO;IWATA YOSHIHISA
分类号 G11C13/00 主分类号 G11C13/00
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