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发明名称
METHOD FOR FORMING DEPRESSED DEPTH OF SEMICONDUCTOR SURFACE
摘要
申请公布号
KR1019960000373(B1)
申请公布日期
1996.01.05
申请号
KR1019920017254
申请日期
1992.09.22
申请人
发明人
分类号
主分类号
代理机构
代理人
主权项
地址
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