| 发明名称 |
SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SOLID-STATE IMAGING DEVICE |
| 摘要 |
According to one embodiment, a solid-state imaging device comprises a photoelectric conversion film provided over a semiconductor substrate; a storing electrode provided under part of the photoelectric conversion film; an insulating film provided under the photoelectric conversion film so as to cover a top and a side wall of the storing electrode; a transfer electrode provided between the other part of the photoelectric conversion film and the insulating film; and an upper electrode provided on the photoelectric conversion film. |
| 申请公布号 |
US2016301882(A1) |
申请公布日期 |
2016.10.13 |
| 申请号 |
US201514741863 |
申请日期 |
2015.06.17 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
YAMASHITA Hirofumi;SASAKI Hiroki |
| 分类号 |
H04N5/363;H01L27/146 |
主分类号 |
H04N5/363 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A solid-state imaging device comprising:
a photoelectric conversion film provided over a semiconductor substrate; a storing electrode provided under part of the photoelectric conversion film; a first insulating film provided between the photoelectric conversion film and the storing electrode; a transfer electrode provided under the other part of the photoelectric conversion film; an upper electrode provided over the photoelectric conversion film; and a second insulating film provided on a side wall of the storing electrode, wherein a gap along a horizontal direction between the storing electrode and the transfer electrode is defined by a thickness of the second insulating film. |
| 地址 |
Tokyo JP |
