| 摘要 |
The semiconductor pad is manufactured by (A) depositing and photoetching a 1st metal on an insulating layer for forming metallic wire on a semiconductor substrate(1), (B) depositing insulating layer on the 1st metal wiring, opening a via hole(5) and depositing a 2nd metal on it to connect the 1st metal wiring and a 2nd metal wiring, (C) forming the 2nd metal wiring(6) by photoetching and depositing nitride film(7) on it, (D) forming a pad by photoetching the desired portion of the nitride film(7), and (E) selectively depositing metal only on the pad to increase the thickness of the pad metal(8).
|
