| 摘要 |
PURPOSE: To realize fine structure by improving uniformity of gate pattern dimension by restraining change of film thickness of a photoresist for forming a gate pattern while restraining gate resistance. CONSTITUTION: Dummy patterns 8 which have a line-and-space shape of 0.5μm and are composed of the same material as both electrodes 1, 2 are formed in the vicinity of the source electrodes 1 and the drain electrodes 2 outside active layer regions 4. After a photoresist film 6 is spread, the photoresist film 6 is so patterned that pad parts 7a of gate electrodes contain the dummy patterns 8, and gate pattern aperture parts 7 are formed. After that, recess edge parts are formed by recess-etching. At that time, the dummy patterns 8 also are eliminated.
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