发明名称 Single cycle flush for RAM memory
摘要 The present invention provides methods and apparatus for resetting all of the cells in a random access memory (RAM) during one clock cycle without requiring ancillary drivers. At the start of the reset cycle, each column in the memory array is selected to receive the reset value and then each data line in the array is driven low while the inverse of the data line is driven high. After a first predetermined delay, each word line is driven high and all of the memory cells are thus reset. The word lines are then driven low and after a second predetermined delay, the data lines are driven back to a high value. In this manner, each cell in the memory array is reset during one clock cycle.
申请公布号 US5502670(A) 申请公布日期 1996.03.26
申请号 US19940346739 申请日期 1994.11.30
申请人 SONY CORPORATION;SONY ELECTRONICS, INC. 发明人 BANERJEE, PRADIP;GHIA, ATUL V.;LAU, SIMON
分类号 G11C11/41;G11C7/20;(IPC1-7):G11C7/00 主分类号 G11C11/41
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