| 摘要 |
The method is for manufacturing a thin film edge emitter LED by using amorphous hydro silicon carbon. The method comprises the steps of: (A) forming and patterning a first metal layer(102) on a glass substrate(101) to form a lower electrode; (B) forming and patterning a semiconductor layer(104) and a second semiconductor layer(105) on the first metal layer(101); and (C) forming and patterning a second metal layer(106) to form a upper electrode.
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