发明名称 FIELD-ENHANCED DIFFUSION USING OPTICAL ACTIVATION
摘要 A method of making a semiconductor material using a modified forced diffusion method includes the steps of placing the semiconductor material (14) on a substrate (12) in a vaccum vessel (10) locating an impurity (16) atop the semiconductor material, creating a high voltage potential across the semiconductor material, heating the semiconductor material and bombarding the semiconductor material with photons under the effects of the high voltage and heat previously created. The process is particularly applicable to creating N-type diamond semiconductor material.
申请公布号 WO9610264(A1) 申请公布日期 1996.04.04
申请号 WO1995US12432 申请日期 1995.09.26
申请人 NANOPHASE DIAMOND TECHNOLOGIES, INC. 发明人 POPOVICI, GALINA;PRELAS, MARK, A.;SUNG, TALM;KHASAWINAH, S.
分类号 H01J9/02;H01L21/04;H01L21/22;H01L21/225;(IPC1-7):H01L21/225 主分类号 H01J9/02
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