| 摘要 |
<p>A metal or dielectric film deposited on a semiconductor substrate 8 is subsequently bombarded with ions while the substrate 8 is heated to a temperature high enough to cause reflow of the film, whereby voids in the film can be filled or the surface of the film can be planarized. The energy of the bombarding ions preferably is high enough to produce lattice defects in the film and high enough that the temperature required to achieve reflow is less than would be required in the absence of ion bombardment. <IMAGE></p> |
