Verfahren zur Herstellung einer elektrischen Verbindung für eine integrierte Schaltung

摘要

A film carrier type semiconductor device according to the present invention comprising a carrier type (6) and a semiconductor chip (2) attached thereto has the feature that connection of each electrode terminal on the semi-conductor chip and the corresponding lead (4) on the carrier tape is made, instead of by pressing a bump on the electrode terminal and the corresponding lead together, or the like, through the intervention by the hollow cylindrical conductor layer lining the corresponding through hole (13) formed in the carrier tape (6) and solder (4) filling it. After alignment between the lead and the through hole, the solder is caused to melt once and solidified with the result of completing the connection between the electrode terminal and the lead. The advantage of invention resides in that the formation of bumps as of Au and bonding under heat and pressure accompanied by thermal stress, or the like, are needless, and the semiconductor chip is not subjected to heating except the period of keeping the solder molten, accordingly enabling improvement in reliability and reduction in fabrication cost of the film carrier type semiconductor device.