Bidirectional thyristor for high voltage blocking

摘要

The thyristor (1) includes between a semiconductor substrate (4) between two main surfaces (2,3). Also provided are two thyristor structures each having a cathode (5) and an anode (6). On the two main surfaces, between the thyristor structures, there is a separating region (7) and a control electrode (8). One main surface (2) is for the first thyristor structure and the other main surface (3) for the second thyristor structure. The thyristor structures are of an NPNP-structure with each having an n+ doped cathode emitter (9), a p-doped p-pase (10), an n-doped n-base, and a p-doped anode region (12). The anode region of one thyristor equals the p-base of the other, and in the anode region an anode emitter (13) is provided. The cathode and anode are produced through metallisation and are respectively contacted by the cathode and anode regions. The control electrode containing metallisation contacts a p+ doped area in the p-base gate region (14).