Verfahren zur Herstellung eines hochintegrierten Schaltkreises, z.B. eines EPROMs

摘要

Device and method for producing an integrated circuit. The circuit comprises floating grids (14) and control grids (13) covered with a plane oxide layer (32) on which lines of electrical connections (11) have been installed. The control grids especially include indented parts (17) opposite one another and between which the contacts to the sources and to the drains (31) are accommodated. A high integration density may be obtained, as the process according to the invention guarantees a self-alignment of the contacts in the indented parts. This integrated circuit may in particular be an EPROM memory.