METHOD OF MANUFACTURING STORAGE NODE FOR SEMICONDUCTOR MEMORY DEVICE

摘要

The method maximizes the surface area of storage node to increase capacitance. The method includes the steps of: forming the first conductive layer pattern for storage node; forming thin insulating layer on the first conductive layer; forming the second conductive layer on the insulating layer to form a plurality of local insulating layers; engraving the second conductive layer and engraving partially the first conductive to form the surface of the first conductive pattern ruggedly and form spacer on the side wall of the first conductive layer.