发明名称 SYMMETRIC PLASMA PROCESS CHAMBER
摘要 Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
申请公布号 US2016314940(A1) 申请公布日期 2016.10.27
申请号 US201615199046 申请日期 2016.06.30
申请人 Applied Materials, Inc. 发明人 CARDUCCI James D.;TAVASSOLI Hamid;BALAKRISHNA Ajit;CHEN Zhigang;NGUYEN Andrew;BUCHBERGER, JR. Douglas A.;RAMASWAMY Kartik;RAUF Shahid;COLLINS Kenneth S.
分类号 H01J37/32 主分类号 H01J37/32
代理机构 代理人
主权项 1. A plasma processing apparatus, comprising: a lid assembly and a chamber body enclosing a processing region; a substrate support assembly disposed in the chamber body; an upper liner disposed within the chamber body and circumscribing the processing region, wherein the upper liner has a cylindrical wall with a plurality of slots disposed therethrough and arranged symmetrically about a central axis of the substrate support assembly; and a backing liner coupled to the cylindrical wall covering at least one of the plurality of slots.
地址 Santa Clara CA US