| 发明名称 |
PERPENDICULAR MAGNETIZATION FILM, PERPENDICULAR MAGNETIZATION FILM STRUCTURE, MAGNETORESISTANCE ELEMENT, AND PERPENDICULAR MAGNETIC RECORDING MEDIUM |
| 摘要 |
Provided is a structure having a perpendicular magnetization film which is an (Mn1-x,Gax)4N1-y (0<x≦0.5, 0<y<1) thin film having a nitrogen-deficient composition which is formed by controlling and introducing nitrogen N into an MnGa alloy or a thin film containing at least one of Ge, Zn, Sb, Ni, Ag, Sn, Pt, and Rh, instead of Ga. The perpendicular magnetization film exhibits a Curie temperature sufficiently higher than room temperature, has saturation magnetization smaller than that of existing materials, and is capable of being fabricated as a very flat film. |
| 申请公布号 |
US2016314825(A1) |
申请公布日期 |
2016.10.27 |
| 申请号 |
US201615134514 |
申请日期 |
2016.04.21 |
| 申请人 |
NATIONAL INSTITUTE FOR MATERIALS SCIENCE ;SAMSUNG ELECTRONICS COMPANY LIMITED |
发明人 |
SUKEGAWA Hiroaki;LEE Hwachol;HONO Kazuhiro;MITANI Seiji;OHKUBO Tadakatsu;LIU Jun;KASAI Shinya;KIM Kwangseok |
| 分类号 |
G11C11/16;H01L43/12;H01L43/10;H01L43/02;H01L43/08 |
主分类号 |
G11C11/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A perpendicular magnetization film having a composition expressed as
(Mn1-xMx)4N1-y (M represents at least one or two or more of metal elements Ga, Ge, Zn, Sb, Ni, Ag, Sn, Pt, and Rh and 0<x≦0.5 and 0<y<1), and a perovskite type crystal structure. |
| 地址 |
Ibaraki JP |
