High density electrical ceramic oxide capacitor

摘要

An electrical ceramic oxide capacitor utilizable in an integrated circuit memory device, and a method for making same is presented. A transistor is fabricated on a semiconductor substrate according to conventional techniques. A diffusion barrier is deposited over the transistor to protect it from subsequent process steps. Metal contacts are formed to contact the active transistor regions in the substrate, and additional barriers are formed to insulate the metal contacts. In a vertical embodiment, the barriers above the metal contacts can serve as bottom electrodes for the capacitor. In a lateral embodiment, the barriers on the side of the metal contacts serve as electrodes for the capacitor. Electrical ceramic oxide material is deposited between the electrode plates.