| 摘要 |
A semiconductor multiquantum well structure is provided, which includes semiconductor well layers for forming quantum wells and semiconductor barrier layers for forming potential barriers each of which is arranged between adjacent two of the well layers. Each barrier layer is 7 nm or less in thickness. A number of the well layers is selected dependent upon the thickness of each barrier layer so that carriers or electrons and holes are injected into the respective quantum wells substantially uniformly. The number of the well layers is preferably 5 or more, and in the case, each barrier layer preferably ranges from 5 nm to 7 nm in thickness. A semiconductor laser having superior distortion characteristics at a high-frequency band such as 1 GHz can be provided.
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