发明名称 ADVANCED ISOLATION SCHEME FOR DEEP SUBMICRON TECHNOLOGY
摘要 <p>An oxide layer is thermally grown over a semiconductor body, and openings are etched in the oxide layer to expose portions of the surface of the semiconductor body. Then, epitaxial regions are grown from the semiconductor body into the openings in the oxide layer, which epitaxial regions will eventually become the active regions of devices.</p>
申请公布号 WO9631903(A1) 申请公布日期 1996.10.10
申请号 WO1996US02461 申请日期 1996.02.23
申请人 ADVANCED MICRO DEVICES, INC. 发明人 CHANG, KUANG-YEH;LIU, YOWJUANG, WILLIAM;GARDNER, MARK, I.;HAUSE, FREDERICK, N.
分类号 H01L21/20;H01L21/762;(IPC1-7):H01L21/20 主分类号 H01L21/20
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