METHOD OF FORMATION GATE ELECTRODE WITH POLY SILICIDE TYPE

摘要

etching an exposed first thermal oxide film(9) and a silicone substrate(1) by photolithography after forming a photoresist pattern(8); forming a second thermal oxide film(10) and a first impurity injection region with low-density impurity after removing the photoresist(8); forming a gate oxide(12) after removing the first and the second thermal oxide film(9,10), and forming a gate electrode by photolithography after forming a doped polysilicone(13) and a silicide(14) on the gate oxide(12); and forming a second impurity region with high-density impurity after forming a third thermal oxide film(15).